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| 2SK2373 Silicon N Channel MOS FET Application MPAK Low frequency power switching 3 1 2 Features Low on-resistance Small package Low drive current 4 V gate drive device - - - can be driven from 5 V source. * Suitable for low signal load switch G * * * * D 1. Source 2. Gate 3. Drain S Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 100 s, duty cycle 10 % Marking is "ZE-". Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 30 20 0.2 0.4 0.2 150 150 -55 to +150 Unit V V A A A mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK2373 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test Conditions ID = 100 A, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 10 A, VDS = 5 V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 1.4 2 1 2.0 2.5 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 20 mA VGS = 4 V * ID = 10 mA VGS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 0.1 A VGS = 10 V RL = 100 PW = 2 s ------------------------------------------------ -- 1.0 1.4 -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time * Pulse Test Ciss Coss Crss td(on) tr td(off) tf -- -- -- -- -- -- -- 17.8 25.4 3.7 50 125 660 400 -- -- -- -- -- -- -- pF pF pF ns ns ns ns ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK2373 Pch (mW) Maximum Channel Dissipation Curve 200 I D (A) 1 Maximum Safe Operation Area 1 ms 0.3 0.1 = s PW0 m 1 150 Channel Power Dissipation C D Drain Current n tio ra pe O 100 0.03 0.01 0.003 0.001 50 Operation in this area is limited by R DS(on) Ta = 25 C 1 shot pulse 1 0.3 3 10 30 100 Drain to Source Voltage V DS (V) 0 50 100 150 Ta (C) 200 0.1 Ambient Temperature Typical Output Characteristics 2.0 Pulse Test I D (A) (A) 1.6 5V 4.5 V 1.2 4V 0.8 3.5 V 0.4 3V VGS = 2.5 V 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0.5 Typical Transfer Characteristics 0.4 V DS = 10 V ID 0.3 75 C 0.2 25 C Ta = -25 C Drain Current Drain Current 0.1 0 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2373 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) 0.5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 10 5 Ta = 25 C Pulse Test 0.4 2 VGS = 4 V 1 0.5 0.2 0.1 0.01 0.02 10 V 0.3 0.2 0.2 A 0.1 0.1 A I D = 0.05 A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 0.05 0.1 0.2 0.5 Drain Current I D (A) 1 Forward Transfer Admittance |yfs| (S) 1 0.5 Forward Transfer Admittance vs. Drain Current 100 Ta = -25 C 30 10 3 1 0.3 0.1 0.05 0.1 0.2 0.5 1 0 Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) Ciss Coss Crss 0.2 0.1 0.05 25 C 75 C 0.02 0.01 0.01 0.02 V DS = 10 V Pulse Test VGS = 0 f = 1 MHz 10 20 30 40 50 Drain Current I D (A) Drain to Source Voltage V DS (V) 2SK2373 Reverse Drain Current vs. Souece to Drain Voltage 0.5 Reverse Drain Current I DR (A) Pulse Test 0.4 0.3 10 V 5V V GS = 0 0.2 0.1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) |
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